As we have seen in earlier chapters we can implement many complex combinational functions by connecting together the basic gates NAND and NOR- However, the result is not an efficient use of transistor...

We have seen how to implement the logic gates NAND and NOR using NMOS technology. In CMOS the process is just the same except that the complementary PMOS transistors are added....

The delay for a CMOS inverter depends upon the rate of charge or discharge of all capacitors at the output. This load capacitance is due to two components called the inherent capacitance and the exter...

You should notice that when the input is steady at either a high or a low voltage (static condition) then one transistor is always off between Vdd and Vss. Hence the current flowing is extremely small...

A CMOS inverter is shown in Fig. 9.11. It consists of one NMOS and one PMOS transistor. The PMOS device is indicated by the negation sign (i.e. a bubble) on its gate and has a negative threshold volta...

The Metal Oxide Semiconductor Field Effect Transistor (or MOSFET) has proved over the past 15 years to be a very attractive alternative to the BJT. In recent years the MOSFET has become the preferred ...

The low-power Schottky clamped TTL logic family (74LS series) was released i〇 1975. This, as the name suggests, has a lower power dissipation than the 74S series. A circuit diagram for a two-input NAN...

The standard TTL series has a typical propagation delay of 10ns (the term propagation delay was introduced in Chapter 4 and will be covered in more detail later hauler) By this we mean that when an in...